sot-223 unit: mm 3.00 +0.1 -0.1 0.70 +0.1 -0.1 2.9 4.6 6.50 +0.2 -0.2 3.50 +0.2 -0.2 0.90 +0.2 -0.2 7.00 +0.3 -0.3 1.65 +0.15 -0.15 0 .1max 0.90 +0.05 -0.05 12 4 3 1 base 2 collector 3 emitter 4 collector BSP20A features high voltage: v (br)ceo of 250 and 350 volts. available in 12 mm tape and reel absolute maximum ratings ta = 25 parameter symbol rating unit collector-emitter voltage (open base) v ceo 250 v collector-base voltage (open emitter) v cbo 300 v emitter-base voltage (open collector) v ebo 5v collector current (dc) i c 1000 ma total power dissipation @ ta = 25 * 0.8 watts derate above 25 6.4 mw/ storage temperature range t stg -65to150 junction temperature t j 150 thermal resistance from junction-to-ambient r ja 156 /w maximum temperature for soldering purposes 260 time in solder bath 10 sec * device mounted on a fr-4 glass epoxy printed circuit board using minimum recommended footprint. p d t l electrical characteristics ta = 25 parameter symbol testconditons min typ max unit collector-emitter breakdown voltage v (br)ceo i c =1.0ma,i b = 0 250 v collector-base cutoff current i cbo v cb = 400 v, i e = 0 20 na emitter-base cutoff current i ebo v eb =5.0v,i c =0 10 ma dc current gain * h fe i c =20ma,v ce =10v 40 current-gain ? bandwidth product * f t i c =10ma,v ce =10v,f=5.0mhz 70 mhz collector-emitter saturation voltage * v ce(sat) i c =50ma,i b =4.0ma 0.5 v base-emitter saturation voltage * v be(sat) i c =50ma,i b =4.0ma 1.3 v * pulse test: pulse width 300 s, duty cycle = 2.0% marking marking sp20a smd type transistors smd type transistors smd type transistors smd type transistors smd type transistors smd type transistors smd type transistors smd type transistors smd type transistors smd type smd type smd type smd type product specification sales@twtysemi.com 1 of 1 http://www.twtysemi.com 4008-318-123
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